The XRD is utilized to determine the crystalline structure and oxidation states of the different metal oxide layers we obtained.
For the combinatorial project a scanning XRD system from Rigaku, with a Cu Kα X-ray source (1.54060 Å) was used.
The database includes over 2,000 XRD scans from over 100 different libraries (in each library ~13 points were scanned) each of these scans have gone through post-processing including background removal, peak detection and phase identification.
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This method is used to obtain the optical properties of the material and device libraries.
The EDS detector in a high-resolution scanning electron microscope (HRSEM) was used to determine the compositions
The forbidden energy gap between the valence band (VB) and the conduction band (CB) of a material.
In the J-V method the photocurrent is measured as a function of the photovoltage of the solar cell.
Sheet Resistance (SHR) is the resistance of a two-dimensional layer, for example thin film, doped semiconductor region.