The database includes over 500,000 current-voltage scans from 1,800 device libraries. Values of open circuit voltage (Voc), Short circuit current (Jsc), maximal power (Pmax), and fill factor (FF) were derived from each of these scans. In the J-V method the photocurrent is measured as a function of the photovoltage of the solar cell. The database includes over 500,000 current-voltage scans from 1,800 device libraries. The cell is measured under illumination from the short circuit current (Jsc) to the open circuit voltage (Voc).
The scan is often performed in two directions: a forward scan, which is towards Voc, and a reverse scan, which is towards the Jsc, to verify that no hysteresis has occurred during the measurement, which would indicate that other chemical or electrical reactions are happening simultaneously. In the combinatorial high-throughput method a home-built scanner was used to measure the J-V curves. The solar simulator light was an LDLS Xe lamp calibrated to AM1.5G, with a power of 100 mW cm-2. The light was focused onto each point in the library using an optical fiber, and a spring-loaded gold plated probe was used to make electrical contact with the metal back contacts on the library. The front contact was soldered onto the library with an ultrasonic soldering head, which allowed for penetration to the FTO layer, using Sn as the metal. The full matrix of 169 points was automatically scanned for every library, by a computer program.
The spring probe, which contacted a metal back contact, measured it, and then moved on to the next metal back contact on the library via a Z arm. To make sure that the light source is continuously stable and calibrated it was checked using a Si photodiode before every measurement, to ascertain whether the correct photocurrent is obtained. The illuminated area of the solar cells was 0.026cm2, and the scan rate was set depending on the material being measured.
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This method is used to obtain the optical properties of the material and device libraries.
The EDS detector in a high-resolution scanning electron microscope (HRSEM) was used to determine the compositions
The XRD is utilized to determine the crystalline structure and oxidation states of the different metal oxide layers we obtained.
Sheet Resistance (SHR) is the resistance of a two-dimensional layer, for example thin film, doped semiconductor region.
The forbidden energy gap between the valence band (VB) and the conduction band (CB) of a material.