The EDS detector in a high-resolution scanning electron microscope (HRSEM) was used to determine the compositions of the elements in materials libraries as well as to see whether there were any impurities in single material libraries.
The scanning material science process was automated, the libraries were placed in the HR-SEM system at a given position, to accurately scan 169 points, and the EDS detector was calibrated according to a Cu reference.
The combinatorial database includes compositional data on 50,000 points derived from the EDS scans. This data indicates the relation between the different elements (not including oxygen).
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This method is used to obtain the optical properties of the material and device libraries.
The XRD is utilized to determine the crystalline structure and oxidation states of the different metal oxide layers we obtained.
The forbidden energy gap between the valence band (VB) and the conduction band (CB) of a material.
In the J-V method the photocurrent is measured as a function of the photovoltage of the solar cell.
Sheet Resistance (SHR) is the resistance of a two-dimensional layer, for example thin film, doped semiconductor region.
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